Electromechanics of charge shuttling in dissipative nanostructures

• Published in: arXiv.org
• Main Authors: Nord, T, Gorelik, L Y, Shekhter, R I, Jonson, M
• Format: Paper
• Language: English
• Published: Ithaca Cornell University Library, arXiv.org 08.02.2002
• Subjects: Charge transfer; Computer simulation; Current voltage characteristics; Electromechanics; Monte Carlo simulation; Single-electron transistors
• ISSN: 2331-8422
• DOI: 10.48550/arxiv.0106589

We investigate the current-voltage (IV) characteristics of a model single-electron transistor where mechanical motion, subject to strong dissipation, of a small metallic grain is possible. The system is studied both by using Monte Carlo simulations and by using an analytical approach. We show that electromechanical coupling results in a highly nonlinear IV-curve. For voltages above the Coulomb blockade threshold, two distinct regimes of charge transfer occur: At low voltages the system behave as a static asymmetric double junction and tunneling is the dominating charge transfer mechanism. At higher voltages an abrupt transition to a new shuttle regime appears, where the grain performs an oscillatory motion back and forth between the leads. In this regime the current is mainly mediated by charges that are carried on the grain as it moves from one lead to the other.