Extraction of electric field in heavily irradiated silicon pixel sensors

A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at...

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Bibliographic Details
Published inarXiv.org
Main Authors Dorokhov, A, Allkofer, Y, Amsler, C, Bortoletto, D, Chiochia, V, Cremaldi, L, Cucciarelli, S, Hoermann, C, Kim, D, Konecki, M, Kotlinski, D, Prokofiev, K, Regenfus, C, Rohe, T, Sanders, D, Son, S, Speer, T, Swartz, M
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 25.06.2005
Subjects
Charge simulation
Collection
Deflection
Electric fields
Pixels
Sensors
Silicon
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Summary:A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1E15 neq/cm2 sensors.
ISSN:2331-8422
DOI:10.48550/arxiv.0412036