Kinetics of Exciton Self-Trapping Induced Defect Accumulation in Rare-Gas Solids

The kinetics of the process of defect accumulation in rare-gas solids as a result of exciton self-trapping was studied using the selective vacuum ultraviolet photoluminescence method for monitoring of the crystal structure of the samples. The simple kinetic model of defect accumulation in rare-gas s...

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Bibliographic Details
Published inarXiv.org
Main Authors Ogurtsov, A N, Bliznjuk, O N, N Yu Masalitina
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 08.02.2009
Subjects
Accumulation
Crystal defects
Crystal structure
Defects
Excitons
Gas sampling
Linear transformations
Luminescence
Photoluminescence
Rare gases
Time dependence
Trapping
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Summary:The kinetics of the process of defect accumulation in rare-gas solids as a result of exciton self-trapping was studied using the selective vacuum ultraviolet photoluminescence method for monitoring of the crystal structure of the samples. The simple kinetic model of defect accumulation in rare-gas samples was applied to the fitting of the dose dependences of luminescence from solid Xe and Ne. The characteristic kinetic parameters were obtained by linear transformation of the time dependence of luminescence intensity of "defect" subbands.
ISSN:2331-8422