Electronic structure and optical properties of Graphene Monoxide

The electronic and optical properties of graphene monoxide, a new type of semiconductor materials, are first theoretically studied based on density functional theory. Electronic calculations show that the band gap is 0.952 eV which indicate that graphene monoxide is a direct band gap semiconductor....

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Bibliographic Details
Published inarXiv.org
Main Authors Yang, Gui, Zhang, Yufeng, Xunwang Yan
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 04.09.2012
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Summary:The electronic and optical properties of graphene monoxide, a new type of semiconductor materials, are first theoretically studied based on density functional theory. Electronic calculations show that the band gap is 0.952 eV which indicate that graphene monoxide is a direct band gap semiconductor. The density of states of graphene monoxide and the partial density of states for C and O are given to understand the electronic structure. In addition, we calculate the optical properties of graphene monoxide including the complex dielectric function, absorption coefficient, the complex refractive index, loss-function, reflectivity and conductivity. These results provide a physical basis for the potential applications in optoelectronic devices.
ISSN:2331-8422