Distinguishing photon and polariton lasing from GaAs microcavities by spectral and temporal analysis of the two-threshold behavior

We compare polariton lasing with photon lasing of a planar GaAs/GaAlAs microcavity with zero detuning between the bare cavity mode and the bare exciton mode. For the emission from the lower energy-momentum dispersion branch we find a two-threshold behavior of the ground state in the input-output cur...

Full description

Saved in:
Bibliographic Details
Published inarXiv.org
Main Authors Jean-Sebastian Tempel, Veit, Franziska, Aßmann, Marc, Kreilkamp, Lars Erik, Rahimi-Iman, Arash, Löffler, Andreas, Höfling, Sven, Reitzenstein, Stephan, Worschech, Lukas, chel, Alfred, Bayer, Manfred
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 27.01.2011
Subjects
Dispersion
Emission
Excitons
Gallium arsenide
Lasing
Microcavities
Polaritons
Pulse duration
Online AccessGet full text

Cover

More Information
Summary:We compare polariton lasing with photon lasing of a planar GaAs/GaAlAs microcavity with zero detuning between the bare cavity mode and the bare exciton mode. For the emission from the lower energy-momentum dispersion branch we find a two-threshold behavior of the ground state in the input-output curve where each transition is accompanied by characteristic changes of the in-plane mode dispersion. In particular, we show that the thresholds are unambiguously evidenced in the photon statistics of the emission based on the second-order correlation function. Moreover, the distinct two-threshold behavior is confirmed in the evolution of the emission pulse duration.
ISSN:2331-8422