Polarized Temperature Dependent Raman Study of Bi2Te3-Cr2Ge2Te6 heterostructure and the Ferromagnetic Insulator Cr2Ge2Te6

Cr2Ge2Te6 has been of interest for decades, as it is one of only a few ferromagnetic insulators. Recently, this material has been revisited due to its potential as a substrate for Bi2Te3, a topological insulator. This enables the possibility of studying the anomalous quantum Hall effect in topologic...

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Bibliographic Details
Published inarXiv.org
Main Authors Yao Tian, Ji, Huiwen, R J Cava L D Alegria, Petta, J R, Burch, Kenneth S
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 07.10.2014
Subjects
Anharmonicity
Bismuth tellurides
Electrons
Ferromagnetic materials
Heterostructures
Phonons
Quantum Hall effect
Substrates
Temperature dependence
Topological insulators
Topology
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Summary:Cr2Ge2Te6 has been of interest for decades, as it is one of only a few ferromagnetic insulators. Recently, this material has been revisited due to its potential as a substrate for Bi2Te3, a topological insulator. This enables the possibility of studying the anomalous quantum Hall effect in topological insulators, and a route to novel spintronic devices. To probe the compatibility of these two materials, we use polarized variable temperature Raman microscopy to study Bi2Te3-Cr2Ge2Te6 heterostructure as well as the phonon dynamics of Cr2Ge2Te6. We found the temperature dependence of the Cr2Ge2Te6 phonons results primarily from anharmonicity, though a small magneto-elastic coupling is also observed. Our results confirm the potential of Cr2Ge2Te6 as a substrate for topological insulators.
ISSN:2331-8422