Polarized Temperature Dependent Raman Study of Bi2Te3-Cr2Ge2Te6 heterostructure and the Ferromagnetic Insulator Cr2Ge2Te6
Cr2Ge2Te6 has been of interest for decades, as it is one of only a few ferromagnetic insulators. Recently, this material has been revisited due to its potential as a substrate for Bi2Te3, a topological insulator. This enables the possibility of studying the anomalous quantum Hall effect in topologic...
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Published in | arXiv.org |
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Main Authors | , , , , |
Format | Paper |
Language | English |
Published |
Ithaca
Cornell University Library, arXiv.org
07.10.2014
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Subjects | |
Online Access | Get full text |
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Summary: | Cr2Ge2Te6 has been of interest for decades, as it is one of only a few ferromagnetic insulators. Recently, this material has been revisited due to its potential as a substrate for Bi2Te3, a topological insulator. This enables the possibility of studying the anomalous quantum Hall effect in topological insulators, and a route to novel spintronic devices. To probe the compatibility of these two materials, we use polarized variable temperature Raman microscopy to study Bi2Te3-Cr2Ge2Te6 heterostructure as well as the phonon dynamics of Cr2Ge2Te6. We found the temperature dependence of the Cr2Ge2Te6 phonons results primarily from anharmonicity, though a small magneto-elastic coupling is also observed. Our results confirm the potential of Cr2Ge2Te6 as a substrate for topological insulators. |
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ISSN: | 2331-8422 |