Strong Resonances of Quasi 1D Structures at the Bi/InAs(100) Surface

Thin Bi films are interesting candidates for spintronic applications due to a large spin-orbit splitting that, combined with the loss of inversion symmetry at the surface, results in a band structure that is not spin-degenerate. In recent years, applications for topological insulators based on Bi an...

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Bibliographic Details
Published inarXiv.org
Main Authors Heckmann, Olivier, Richter, Maria Christine, Jean-Michel Mariot, Nicolaï, Laurent, Vobornik, Ivana, Wang, Weimin, Djukic, Uros, Hricovini, Karol
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 23.06.2018
Subjects
Bismuth base alloys
Electron states
Electronic structure
Electrons
Hard surfacing
Substrates
Thin films
Topological insulators
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Summary:Thin Bi films are interesting candidates for spintronic applications due to a large spin-orbit splitting that, combined with the loss of inversion symmetry at the surface, results in a band structure that is not spin-degenerate. In recent years, applications for topological insulators based on Bi and Bi alloys have as well attracted much attention. Here we present ARPES studies of Bi/InAs(100) interface. Bismuth deposition followed by annealing of the surface results in the formation of one full Bi monolayer decorated by Bi-nanolines. We found that the building up of the interface does affect the electronic structure of the substrate. As a consequence of weak interaction, bismuth states are placed in the gaps of the electronic structure of InAs(100). We observe a strong resonance of the Bi electronic states close to the Fermi level; its intensity depends on the photon energy and the photon polarization. These states show nearly no dispersion when measured perpendicular to the nanolines, confirming their one-dimensionality.
ISSN:2331-8422