Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids

A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treated with post epitaxial process to create a region with a high density of nanovoids in Ge layer which act as a barrier for...

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Bibliographic Details
Published inarXiv.org
Main Authors Bioud, Youcef A, Boucherif, Abderraouf, Paradis, Etienne, Soltani, Ali, Drouin, Dominique, Arès, Richard
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 15.05.2018
Subjects
Density
Germanium
Low cost
Silicon substrates
Threading dislocations
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Summary:A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treated with post epitaxial process to create a region with a high density of nanovoids in Ge layer which act as a barrier for threading dislocations propagation .
ISSN:2331-8422