Impulse Response Time Measurements in Hg^sub 0.7^Cd^sub 0.3^Te MWIR Avalanche Photodiodes

The response time of front-sided illuminated n-on-p Hg^sub 0.7^Cd^sub 0.3^Te electron avalanche photodiodes (e-APDs) at T = 77 K was studied using impulse response measurements at λ = 1.55 µm. We measured typical rise and fall times of 50 ps and 800 ps, respectively, at gains of M [approximate] 100,...

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Published inJournal of electronic materials Vol. 37; no. 9; p. 1261
Main Authors Perrais, Gwladys, Rothman, Johan, Destefanis, Gerard, Chamonal, Jean-Paul
Format Journal Article
LanguageEnglish
Published Warrendale Springer Nature B.V 01.09.2008
Subjects
Bandwidths
Finite element analysis
Mercury cadmium telluride epitaxy
Semiconductor research
Simulation
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Summary:The response time of front-sided illuminated n-on-p Hg^sub 0.7^Cd^sub 0.3^Te electron avalanche photodiodes (e-APDs) at T = 77 K was studied using impulse response measurements at λ = 1.55 µm. We measured typical rise and fall times of 50 ps and 800 ps, respectively, at gains of M [approximate] 100, and a record gain-bandwidth (GBW) product of GBW = 1.1 THz at M = 2800. Experiments as a function of the collection width have shown that the fall time is strongly limited by diffusion. Variable-gain measurements showed that the impulse response is first-order sensitive to the level of the output amplitude. Only a slight increase in the rise time and the fall time was observed with the gain at constant output amplitude, which is consistent with a strongly dominant electron multiplication. Comparisons of the experimental results with Silvaco finite element simulations confirmed the diffusion limitation of the response time and allowed the illustration of the transit time and RC effects. [PUBLICATION ABSTRACT]
ISSN:0361-5235
1543-186X