Direct evaluation of electrical dipole moment and oxygen density ratio at high-k dielectrics/SiO^sub 2^ interface by X-ray photoelectron spectroscopy analysis

The electrical dipole moment at an ultrathin high-k (HfO2, Al2O3, TiO2, Y2O3, and SrO)/SiO2 interface and its correlation with the oxygen density ratio at the interface have been directly evaluated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. The electrical dipole...

Full description

Saved in:
Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 57; no. 4; p. 04FB07
Main Authors Fujimura, Nobuyuki, Ohta, Akio, Ikeda, Mitsuhisa, Makihara, Katsunori, Miyazaki, Seiichi
Format Journal Article
LanguageEnglish
Published Tokyo Japanese Journal of Applied Physics 01.04.2018
Subjects
Aluminum oxide
Density ratio
Dipole moments
Hafnium oxide
Ions
Oxygen
Photoelectrons
Silicon dioxide
Spectrum analysis
Titanium dioxide
X ray photoelectron spectroscopy
Yttrium oxide
Online AccessGet full text

Cover

More Information
Summary:The electrical dipole moment at an ultrathin high-k (HfO2, Al2O3, TiO2, Y2O3, and SrO)/SiO2 interface and its correlation with the oxygen density ratio at the interface have been directly evaluated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. The electrical dipole moment at the high-k/SiO2 interface has been measured from the change in the cut-off energy of secondary photoelectrons. Moreover, the oxygen density ratio at the interface between high-k and SiO2 has been estimated from cation core-line signals, such as Hf 4f, Al 2p, Y 3d, Ti 2p, Sr 3d, and Si 2p. We have experimentally clarified the relationship between the measured electrical dipole moment and the oxygen density ratio at the high-k/SiO2 interface.
ISSN:0021-4922
1347-4065