Effective surface passivation of In^sub 0.53^Ga^sub 0.47^As(001) using molecular beam epitaxy and atomic layer deposited HfO^sub 2^ - A comparative study
Molecular-beam-epitaxy (MBE) and atomic-layer-deposition (ALD) high-k HfO2 dielectrics have been in-situ deposited on MBE-grown pristine p- and n-In0.53Ga0.47As(001). The HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) from both methods all exhibit excellent capacitance-voltage (C...
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| Published in | Journal of crystal growth Vol. 477; p. 159 |
|---|---|
| Main Authors | , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Amsterdam
Elsevier BV
01.11.2017
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| Subjects | |
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| Abstract | Molecular-beam-epitaxy (MBE) and atomic-layer-deposition (ALD) high-k HfO2 dielectrics have been in-situ deposited on MBE-grown pristine p- and n-In0.53Ga0.47As(001). The HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) from both methods all exhibit excellent capacitance-voltage (C-V) characteristics with true inversion and low leakage current densities. Moreover, interfacial trap densities (Dit's) with no discernible peaks at the mid-gap were measured using the temperature-dependent conductance method. Both HfO2/InGaAs hetero-structures have exhibited outstanding thermal stabilities to 800°Celsius. |
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| AbstractList | Molecular-beam-epitaxy (MBE) and atomic-layer-deposition (ALD) high-k HfO2 dielectrics have been in-situ deposited on MBE-grown pristine p- and n-In0.53Ga0.47As(001). The HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) from both methods all exhibit excellent capacitance-voltage (C-V) characteristics with true inversion and low leakage current densities. Moreover, interfacial trap densities (Dit's) with no discernible peaks at the mid-gap were measured using the temperature-dependent conductance method. Both HfO2/InGaAs hetero-structures have exhibited outstanding thermal stabilities to 800°Celsius. |
| Author | Hong, M Wan, HW Kwo, J Lee, WC Lin, TD Chang, YH Chang, P Pi, TW |
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| SubjectTerms | Dielectrics Hafnium oxide Leakage current Metal oxides Molecular beam epitaxy Resistance Studies Temperature Temperature dependence |
| Title | Effective surface passivation of In^sub 0.53^Ga^sub 0.47^As(001) using molecular beam epitaxy and atomic layer deposited HfO^sub 2^ - A comparative study |
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