Effective surface passivation of In^sub 0.53^Ga^sub 0.47^As(001) using molecular beam epitaxy and atomic layer deposited HfO^sub 2^ - A comparative study

Molecular-beam-epitaxy (MBE) and atomic-layer-deposition (ALD) high-k HfO2 dielectrics have been in-situ deposited on MBE-grown pristine p- and n-In0.53Ga0.47As(001). The HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) from both methods all exhibit excellent capacitance-voltage (C...

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Bibliographic Details
Published inJournal of crystal growth Vol. 477; p. 159
Main Authors Hong, M, Wan, HW, Chang, P, Lin, TD, Chang, YH, Lee, WC, Pi, TW, Kwo, J
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier BV 01.11.2017
Subjects
Dielectrics
Hafnium oxide
Leakage current
Metal oxides
Molecular beam epitaxy
Resistance
Studies
Temperature
Temperature dependence
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Summary:Molecular-beam-epitaxy (MBE) and atomic-layer-deposition (ALD) high-k HfO2 dielectrics have been in-situ deposited on MBE-grown pristine p- and n-In0.53Ga0.47As(001). The HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) from both methods all exhibit excellent capacitance-voltage (C-V) characteristics with true inversion and low leakage current densities. Moreover, interfacial trap densities (Dit's) with no discernible peaks at the mid-gap were measured using the temperature-dependent conductance method. Both HfO2/InGaAs hetero-structures have exhibited outstanding thermal stabilities to 800°Celsius.
ISSN:0022-0248
1873-5002