Growth of epitaxially stabilized, non-cubic Gd^sub 2^O^sub 3^ on silicon(1?1?1) substrates

We report on the growth of non-cubic gadolinium oxide on a silicon substrate using molecular beam epitaxy. Structural investigations with X-ray diffraction show that the structure of the oxide differs from the expected cubic structure. Possible structures of gadolinium oxide besides the only stable...

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Bibliographic Details
Published inJournal of crystal growth Vol. 480; p. 141
Main Authors Moellers, M, Margenfeld, C, Wietler, TF, Osten, HJ
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier BV 15.12.2017
Subjects
Diffraction
Epitaxial growth
Gadolinium
Gadolinium oxides
Hexagonal phase
Molecular beam epitaxy
Silicon substrates
Substrates
X-ray diffraction
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Summary:We report on the growth of non-cubic gadolinium oxide on a silicon substrate using molecular beam epitaxy. Structural investigations with X-ray diffraction show that the structure of the oxide differs from the expected cubic structure. Possible structures of gadolinium oxide besides the only stable cubic structure include a monoclinic and a hexagonal phase. Both phases are very similar, which increases the difficulty to distinguish between the two structures. Gracing incidence X-ray diffraction results of the grown layer indicate a monoclinic structure while in contradiction to that a phi-scan shows a sixfold symmetry. We explain these results by a monoclinic structure with six rotational domains.
ISSN:0022-0248
1873-5002