Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with S^sub 2^O^sub 8^^sup 2-^-Fe^sup 2+^ based slurry

In this paper, a significant improvement of chemical-mechanical polishing on gallium nitride with S2O82--Fe2+ based slurry is presented in detail. The results indicate that the S2O82--Fe2+ additives possessed obvious effect to enhance the polishing efficiency of GaN, and successfully achieved good s...

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Bibliographic Details
Published inTribology international Vol. 110; p. 441
Main Authors Shi, Xiaolei, Zou, Chunli, Pan, Guoshun, Gong, Hua, Xu, Li, Zhou, Yan
Format Journal Article
LanguageEnglish
Published Kidlington Elsevier BV 01.06.2017
Subjects
Additives
Catalysis
Chemical-mechanical polishing
Gallium nitride epitaxy
Gallium nitrides
Reagents
Slurries
Studies
Topography
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Summary:In this paper, a significant improvement of chemical-mechanical polishing on gallium nitride with S2O82--Fe2+ based slurry is presented in detail. The results indicate that the S2O82--Fe2+ additives possessed obvious effect to enhance the polishing efficiency of GaN, and successfully achieved good surface quality after polishing. The addition of complexing agent obviously improves the stability of catalytic system. Besides, we also studied the special change rule of atomic step-terrace topography from the surface of GaN to describe the material removal mechanism during CMP process. The results show that the removal of materials by CMP follows rigid rules, which may help to improve the material removal mechanism of CMP.
ISSN:0301-679X
1879-2464