Dendritic composite array of silicon nanowires/WO^sub 3^ nanowires for sensitive detection of NO^sub 2^ at room temperature

Dendritic composite array of silicon nanowires (SiNWs)/WO3 nanowires was prepared for highly sensitive gas sensor application. WO3 nanowires were grown directly on the top section of SINWs fabricated by metal-assisted chemical etching (MACE), through thermal annealing of pre-deposited W film to obta...

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Bibliographic Details
Published inMaterials letters Vol. 207; p. 29
Main Authors Qin, Yuxiang, Wang, Zefeng, Liu, Diao, Wang, Kehang
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier BV 15.11.2017
Subjects
Chemical etching
Gas sensors
Materials science
Nanocomposites
Nanowires
Nitrogen dioxide
Response time
Room temperature
Selectivity
Sensors
Silicon
Studies
Tungsten oxides
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Summary:Dendritic composite array of silicon nanowires (SiNWs)/WO3 nanowires was prepared for highly sensitive gas sensor application. WO3 nanowires were grown directly on the top section of SINWs fabricated by metal-assisted chemical etching (MACE), through thermal annealing of pre-deposited W film to obtain dendritic SiNWs/WO3 nanowires array. At room temperature (RT), the composite sensor shows obviously enhanced sensing response to NO2 in comparison to pure SINWs sensor. The response value upon 5 ppm NO2 exposure is more than four folds of that from SiNWs. Meanwhile, good selectivity as well as perfect dynamic characteristic, especially ultrafast response (response time <1 s to 0.5-5 ppm NO2) is achieved for the composite sensor. The underlying sensing mechanism of the composite sensor is analyzed in detail.
ISSN:0167-577X
1873-4979