Field-Dependent Electron Temperature due to Electron–Phonon Interaction in a 2DEG at Low Lattice Temperature

Electric field-dependent electron temperature is calculated in a non-degenerate two-dimensional electron gas (2DEG) formed in semiconductor interfaces considering simple electron temperature model valid for Maxwell-Boltzmann distribution at low lattice temperatures when the free electrons are domina...

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Bibliographic Details
Published inJournal of atoms and molecules Vol. 7; no. 3; p. 1056
Main Author Ghorai, A K
Format Journal Article
LanguageEnglish
Published Chennai Journal of Atoms and Molecules 01.05.2017
Subjects
Acoustics
Boltzmann distribution
Deformation
Electric fields
Electron energy
Electron gas
Free electrons
Interfaces
Phonons
Semiconductors
Silicon
Temperature
Temperature effects
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Summary:Electric field-dependent electron temperature is calculated in a non-degenerate two-dimensional electron gas (2DEG) formed in semiconductor interfaces considering simple electron temperature model valid for Maxwell-Boltzmann distribution at low lattice temperatures when the free electrons are dominantly scattered by the deformation acoustic phonons. The result of the dependence of electron temperature upon electric field in Si(100) 2DEG is compared with other theoretical result.
ISSN:2277-1247