Cu^sub 4^O^sub 3^-based all metal oxides for transparent photodetectors

All-oxide photodetectors based on Cu4O3 were fabricated using DC and RF magnetron sputtering. A quality paramelaconite Cu4O3 was formed by using large-scale available sputtering method and identified by X-ray diffraction. In order to establish a transparent junction, p-type Cu4O3 was deposited onto...

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Bibliographic Details
Published inSensors and actuators. A. Physical. Vol. A253; p. 35
Main Authors Kim, Hong-Sik, Kumar, Melvin David, Park, Wang-Hee, Patel, Malkeshkumar, Kim, Joondong
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier BV 01.01.2017
Subjects
Carrier mobility
Copper
Diffraction
Electron transport
Indium tin oxides
Magnetron sputtering
Nickel
Optoelectronics
Photoelectricity
Photometers
Transmittance
Zinc oxide
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Summary:All-oxide photodetectors based on Cu4O3 were fabricated using DC and RF magnetron sputtering. A quality paramelaconite Cu4O3 was formed by using large-scale available sputtering method and identified by X-ray diffraction. In order to establish a transparent junction, p-type Cu4O3 was deposited onto an n-type ZnO. The indium-tin-oxide (ITO) layer was served as an electron transporting layer. The general device has a structure of Cu4O3/ZnO/ITO to show overall high-transmittance for broad wavelengths with a peak transmittance over 72%. To enhance the photodetector performances, a functional NiO layer was applied as a hole transporting layer, which actively controls the carrier movements, resulting in a quick photoresponse of 33 ms. We demonstrated the paramelaconite Cu4O3 as a transparent entity and provide the route for effective designs for transparent photoelectric applications.
ISSN:0924-4247
1873-3069