Fabrication of YH^sub 3^ thin film using Pd/Ni co-capping layer: Ni thickness effect

With an aim of decreasing the temperature at which metallic Y reacts with H2 to form the semiconductor phase YH3 (y phase), we employed Pd and Ni co-capping layers as catalysts. For this purpose, various types of Pd/Ni co-capping layers having different Ni thicknesses varied from 5 to 80 nm while ha...

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Bibliographic Details
Published inJournal of crystal growth Vol. 468; p. 714
Main Authors Yabuki, K, Hirama, H, Aoki, N, Sakai, M, Saito, Y, Higuchi, K, Kitajima, A, Hasegawa, S, Nakamura, O
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier BV 15.06.2017
Subjects
Beta phase
Capping
Catalysis
Chemical elements
Cobalt
Palladium
Semiconductors
Temperature
Thickness
Thin films
Yttrium
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Summary:With an aim of decreasing the temperature at which metallic Y reacts with H2 to form the semiconductor phase YH3 (y phase), we employed Pd and Ni co-capping layers as catalysts. For this purpose, various types of Pd/Ni co-capping layers having different Ni thicknesses varied from 5 to 80 nm while having a Pd thickness of 80 nm were prepared as a catalytic capping layer on metal Y. We achieved an onset temperature (50 °C) of the y phase formation, which is approximately independent of Ni thickness except for 40 nm. A directing principle for decreasing the onset temperature of the y phase formation was discussed in terms of crystal texture and crystallite size of dihydride phase (β phase).
ISSN:0022-0248
1873-5002