POROUS SILICON (POR-SI) LAYERS IMPEDANCE SPECTROSCOPY IN THE RANGE OF LOW FREQUENCIES

Dielectric properties of porous silicon structures is investigated. Two types of polarization in the investigated structure: dipole relaxation and m migratory polarization in the low-frequency region are detected. The existence of relaxation processes associated with the diffusion of ions in the mat...

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Bibliographic Details
Published inSmart nanocomposites Vol. 7; no. 2
Main Authors Sevryugina, M P, Spivak, Yu M, Moshnikov, V A, Pshchelko, N S
Format Journal Article
LanguageEnglish
Published Hauppauge Nova Science Publishers, Inc 01.07.2016
Subjects
Dielectric properties
Diffusion
Electric fields
Impedance spectroscopy
Low frequencies
Polarization
Porous silicon
Silicon
Spectrum analysis
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Summary:Dielectric properties of porous silicon structures is investigated. Two types of polarization in the investigated structure: dipole relaxation and m migratory polarization in the low-frequency region are detected. The existence of relaxation processes associated with the diffusion of ions in the material is found.
ISSN:1949-4823