Photon Absorption Improvement in Reststrahlen Band of Mn^sub 1.56^Co^sub 0.96-x^Ni^sub 0.48^Fe^sub x^O^sub 4^ Series Films

• Published in: Journal of electronic materials Vol. 46; no. 8; p. 5349
• Main Authors: Zhang, Xiaobo, Shi, Qin, Ren, Wei, Zhou, Qing, Lu, Hewei, Bao, Shuai, Wang, Lei, Bian, Liang, Xu, Jinbao, Chang, Aimin
• Format: Journal Article
• Language: English
• Published: Warrendale Springer Nature B.V 01.08.2017
• Subjects: Absorptivity; Devices; Distortion; Manganese; Mathematical analysis; Nickel; Optical properties; Photon absorption; Raman spectroscopy; Scanning electron microscopy; Silicon dioxide; Silicon substrates
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-017-5556-z

Mn1.56Co0.96-xNi0.48FexO4 series films have been fabricated on SiO2/Si(100) substrates by chemical solution deposition and characterized by scanning electron microscopy, and their structural and mid-infrared (IR) properties investigated. The results indicate slight improvement in the microstructure and density of the films with increasing Fe content. The results of Raman spectroscopy showed variation in the local distortion and cation distribution at octahedral sites with elevated Fe content. The IR optical properties of the films were investigated at room temperature in the wavelength range from 1.5 [mu]m to 25 [mu]m. A strong absorption peak corresponding to Reststrahlen band located at 19.5 [mu]m was observed and its absorption intensity found to improve with increasing Fe content in the films. The maximum absorption coefficient was calculated to be about 18,000 cm-1. The results bear technological significance for the design and fabrication of devices for IR detection applications.