RELAXATION PHENOMENA IN BI^sub 12^SIO^sub 20^ SINGLE CRYSTAL

Charge transfer in Bi^sub 12^SiO^sub 20^ structures is investigated. Electric current dependences on time at temperature of 300 K in the dc electric field strength of the 2.10^sup 5^-10^sup 6^ V/m range are measured. Flowing of relaxation polarizing current is shown to result in charge accumulation...

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Bibliographic Details
Published inSmart nanocomposites Vol. 6; no. 2; p. 149
Main Authors Sevryugina, M P, Pshchelko, N S, Moshnikov, V A
Format Journal Article
LanguageEnglish
Published Hauppauge Nova Science Publishers, Inc 01.07.2015
Subjects
Charged particles
Conductivity
Electric fields
Single crystals
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Summary:Charge transfer in Bi^sub 12^SiO^sub 20^ structures is investigated. Electric current dependences on time at temperature of 300 K in the dc electric field strength of the 2.10^sup 5^-10^sup 6^ V/m range are measured. Flowing of relaxation polarizing current is shown to result in charge accumulation in the sample surface area. Experimental regularities coordinate with provisions of the relay mechanism of transfer of a charge with the participation of deep local levels.
ISSN:1949-4823