Barrier Property of a Ta/MnSi x O y Layer Formed by a T-Mn Alloy for a Cu Interconnect
The advanced back-end module of very-large-scale-integrated-circuits (VLSIs) requires an ultrathin diffusion barrier layer between the Cu interconnect and low-K oxides. In this letter, we investigated the electrical properties of the barrier layer formed by a T-Mn alloy on SiO2. A diffusion barrier...
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Published in | IEEE electron device letters Vol. 37; no. 8; p. 1048 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
01.08.2016
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Subjects | |
Online Access | Get full text |
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Summary: | The advanced back-end module of very-large-scale-integrated-circuits (VLSIs) requires an ultrathin diffusion barrier layer between the Cu interconnect and low-K oxides. In this letter, we investigated the electrical properties of the barrier layer formed by a T-Mn alloy on SiO2. A diffusion barrier layer self-formed at the interface during annealing, and the Ta/MnSi x O y bilayer structures were investigated by standard microscopy. Black's equation and the measured mean-time-to-failure (MTTF) were used to obtain the reliability characteristics under different temperatures and current densities. The reliability is approximately two times better than that of the conventional TaN/Ta counterpart. The confidence intervals at 95% for each MTTF confirmed the single failure mode, and the electromigration phenomenon was observed to be the failure mechanism. Our results provide evidence that Ta/MnSi x O y is a promising barrier material for Cu interconnects in VLSIs. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2016.2582499 |