Deposition of heteroepitaxial layers of topological insulator Bi^sub 2^Se^sub 3^ in the trimethylbismuth-isopropylselenide-hydrogen system on the (0001) Al^sub 2^O3 and (100) GaAs substrates

• Published in: Journal of communications technology & electronics Vol. 61; no. 2; p. 183
• Main Authors: Kuznetsov, P I, Luzanov, V A, Yakusheva, G G, Temiryazev, A G, Shchamkhalova, B S, Zhitov, V A, Zakharov, L Yu
• Format: Journal Article
• Language: English
• Published: Silver Spring Springer Nature B.V 01.02.2016
• Subjects: Communications technology; Electronics; Mathematical analysis; Molecular beam epitaxy; Nanotechnology; Organic chemicals; Studies; Substrates; Temperature
• ISSN: 1064-2269; 1555-6557
• DOI: 10.1134/S1064226916010083

Thin solid layers that are formed upon heating of the gaseous trimethylbismuth-isopropylselenide-hydrogen system on the (0001) Al^sub 2^O3 and singular and vicinal (100) GaAs surfaces are studied. The conditions for deposition of metal Bi and phases of Bi^sub 4^Se^sub 3^, BiSe, and topological insulator Bi^sub 2^Se^sub 3^ using the MOCVD method are determined. Pure metastable phase BiSe is obtained for the first time. Bi^sub 2^Se^sub 3^ films with a thickness of no less than 200 nm, a relatively low volume concentration of 3 ×10^sup 18^ cm^sup -3^, and a high mobility of carriers at 300 K (1000 cm^sup 2^ V^sup -1^ s^sup -1^) are fabricated.