Effect of B-site dopants Nb, Ta and W on microstructure and electrical properties of Ca^sub 0.85^(Li, Ce)^sub 0.075^Bi^sub 4^Ti^sub 4^O^sub 15^-0.01MnCO3 piezoelectric ceramics
(Li, Ce) and Mn modified CaBi^sub 4^Ti^sub 4^O^sub 15^ (CBT) based ceramics were prepared by the solid state route, and were substituted by the equimolar ions of Nb^sup 5+^, Ta^sup 5+^ and W^sup 6+^ in the B-site. The variations of crystalline structure, microstructure, piezoelectric properties and...
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Published in | Journal of materials science. Materials in electronics Vol. 27; no. 1; p. 913 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
Springer Nature B.V
01.01.2016
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Online Access | Get full text |
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Summary: | (Li, Ce) and Mn modified CaBi^sub 4^Ti^sub 4^O^sub 15^ (CBT) based ceramics were prepared by the solid state route, and were substituted by the equimolar ions of Nb^sup 5+^, Ta^sup 5+^ and W^sup 6+^ in the B-site. The variations of crystalline structure, microstructure, piezoelectric properties and dielectric properties were investigated. The XRD patterns indicated that all compositions formed a single bismuth layered-structural phase with m = 4. The additions of Nb^sub 2^O^sub 5^, Ta^sub 2^O^sub 5^ and WO3 into CBT-based ceramics were found to affect the electrical properties and temperature stability of the ceramics. Compared with Ta^sub 2^O^sub 5^ and WO3, the Nb-substitued ceramics exhibited the optimum piezoelectric property and dielectric property (d ^sub 33^ ~ 19.6 pC/N, [straight epsilon] ^sub r^ ~ 123.7 and tanδ ~ 0.1 %) among all of these samples, together with a high Curie-temperature (T ^sub C^ ~ 767.6 °C). Thermally activated depolarization behavior also demonstrated that the Nb^sup 5+^ doped CBT-based ceramics possess outstanding thermal stability of piezoelectric properties. These results indicated that Nb^sub 2^O^sub 5^ has a substantial effect on the structure and properties of CBT-based ceramics compared to Ta^sub 2^O^sub 5^ and WO3. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-015-3834-1 |