The Modelling of the Solids Solution Formation Process in Systems In2O3-HfO2 at Heating in Air

• Published in: Journal of Nano- and Electronic Physics Vol. 2; no. 3; p. 84
• Main Author: Soloviova, A E
• Format: Journal Article
• Language: English
• Published: Sumy Ukraine Sumy State University, Journal of Nano - and Electronic Physics 01.07.2010
• ISSN: 2077-6772; 2306-4277

The ionic radiuses for cations, namely, for indium, hafnium, anion, and anion vacancy on the Templiton and Dauben scale, were calculated based on the mathematical models of the solid solution formation in In2 O3 -HfO2 system. The phase transition in indium oxide, which is connected with disorder of anion vacancies in the C-type lattice, was revealed. The formation of solid solutions in In2 O3 -HfO2 system occurs based on the disordered C1 -type phase of indium oxide. It was established that the limited solid solutions of the subtraction-substitution and subtraction-substitution-interstitial types are formed during the sample sintering at 1450 °C and 1600 °C in the air medium. The type of solid solution in In2 O3 -HfO2 system depends on the sizes of indium and hafnium cations. The solid-solution formation energies in the system were determined. It was found that the conductivity, concentration and charge carrier mobility depend on the solid solution type and not on the cation valence of dissolved impurity.