ChemInform Abstract: Structure of [beta]-AgGaO2; Ternary I--III--VI2 Oxide Semiconductor with a Wurtzite-Derived Structure

[beta]-AgGaO2 is prepared by Na+/Ag+ ion exchange of [beta]-NaGaO2 precursor in a mixed molten salt of AgNO3 and KNO3 (200 °C, 12 h).

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Bibliographic Details
Published in	ChemInform Vol. 46; no. 9
Main Authors	Nagatani, Hiraku, Suzuki, Issei, Kita, Masao, Tanaka, Masahiko, Katsuya, Yoshio, Sakata, Osami, Omata, Takahisa
Format	Journal Article
Language	English
Published	Frankfurt Wiley Subscription Services, Inc 01.03.2015
Online Access	Get full text

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Summary:	[beta]-AgGaO2 is prepared by Na+/Ag+ ion exchange of [beta]-NaGaO2 precursor in a mixed molten salt of AgNO3 and KNO3 (200 °C, 12 h).
ISSN:	0931-7597 1522-2667
DOI:	10.1002/chin.201509002