NONCONVENTIONAL APPROACHES IN II-IV-V^sub 2^ BULK AND THIN FILM GROWTH

The growth and properties of transition metal-doped nano structured thin films with room temperature ferromagnetism have been investigated. The ferromagnetic II-IV-V^sub 2^ semiconductor/non-ferromagnetic semiconductor interfaces of the nano films were grown onto Si, GaAs and InAs substrates by puls...

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Bibliographic Details
Published inRevista de Tehnologii Neconventionale Vol. 18; no. 3; p. 104
Main Authors Rusu, Madalin Ion, Zoita, Catalin Nicolae, Kiss, Adrian
Format Journal Article
LanguageEnglish
Published Sibiu Romanian Association for Nonconventional Technologies (ARTN) 01.09.2014
Subjects
Nanostructured materials
Semiconductors
Thin films
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Summary:The growth and properties of transition metal-doped nano structured thin films with room temperature ferromagnetism have been investigated. The ferromagnetic II-IV-V^sub 2^ semiconductor/non-ferromagnetic semiconductor interfaces of the nano films were grown onto Si, GaAs and InAs substrates by pulsed laser deposition (PLD). XRD patterns of films match quite well those of the respective targets. Roughness measured by AFM shows smoother films in case of Co-doping whereas Fe-doped films are rougher, whichever the material system concerned. The Hall effect measurements performed at room temperature show that PLD films in both material systems are n-type, with a carrier concentration of the order10^sup 21^ cm^sup -3^ for MnGeSb and 10^sup 16^cm^sup -3^ for ZnSnSb and mobilities of the order 10^sup 2^ cm^sup 2^/Vs for either system.
ISSN:1454-3087