Ohmic contacts on n-type Al^sub 0.59^Ga^sub 0.41^N for solar blind detectors
Low-resistance ohmic contacts on Al^sub 0.59^Ga^sub 0.41^N were formed using a Ti/Al/Mo/Au metallisation scheme. A specific contact resistivity as low as 6 × 10^sup -5^ Ω-cm^sup 2^ was achieved using a pre-metallisation treatment of the surface in an SiCl^sub 4^ plasma with a self-bias voltage of -3...
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| Published in | Electronics letters Vol. 38; no. 14; p. 1 |
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| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Stevenage
John Wiley & Sons, Inc
04.07.2002
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| Online Access | Get full text |
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| Abstract | Low-resistance ohmic contacts on Al^sub 0.59^Ga^sub 0.41^N were formed using a Ti/Al/Mo/Au metallisation scheme. A specific contact resistivity as low as 6 × 10^sup -5^ Ω-cm^sup 2^ was achieved using a pre-metallisation treatment of the surface in an SiCl^sub 4^ plasma with a self-bias voltage of -300 V in a reactive ion etching system. |
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| AbstractList | Low-resistance ohmic contacts on Al^sub 0.59^Ga^sub 0.41^N were formed using a Ti/Al/Mo/Au metallisation scheme. A specific contact resistivity as low as 6 × 10^sup -5^ Ω-cm^sup 2^ was achieved using a pre-metallisation treatment of the surface in an SiCl^sub 4^ plasma with a self-bias voltage of -300 V in a reactive ion etching system. |
| Author | Kumar, V Long, J P Schetzina, J F Zhou, L Johnson, M A L Selvanathan, D Adesida, I |
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| Copyright | Copyright The Institution of Engineering & Technology Jul 4, 2002 |
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| Snippet | Low-resistance ohmic contacts on Al^sub 0.59^Ga^sub 0.41^N were formed using a Ti/Al/Mo/Au metallisation scheme. A specific contact resistivity as low as 6 ×... |
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| Title | Ohmic contacts on n-type Al^sub 0.59^Ga^sub 0.41^N for solar blind detectors |
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