Ohmic contacts on n-type Al^sub 0.59^Ga^sub 0.41^N for solar blind detectors

Low-resistance ohmic contacts on Al^sub 0.59^Ga^sub 0.41^N were formed using a Ti/Al/Mo/Au metallisation scheme. A specific contact resistivity as low as 6 × 10^sup -5^ Ω-cm^sup 2^ was achieved using a pre-metallisation treatment of the surface in an SiCl^sub 4^ plasma with a self-bias voltage of -3...

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Bibliographic Details
Published inElectronics letters Vol. 38; no. 14; p. 1
Main Authors Selvanathan, D, Zhou, L, Kumar, V, Long, J P, Johnson, M A L, Schetzina, J F, Adesida, I
Format Journal Article
LanguageEnglish
Published Stevenage John Wiley & Sons, Inc 04.07.2002
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Summary:Low-resistance ohmic contacts on Al^sub 0.59^Ga^sub 0.41^N were formed using a Ti/Al/Mo/Au metallisation scheme. A specific contact resistivity as low as 6 × 10^sup -5^ Ω-cm^sup 2^ was achieved using a pre-metallisation treatment of the surface in an SiCl^sub 4^ plasma with a self-bias voltage of -300 V in a reactive ion etching system.
ISSN:0013-5194
1350-911X