SiO^sub 2^/AlGaN/GaN MOSHFET with 0.7 µm gate-length and f^sub max^/f^sub T^ of 40/24 GHz

The performance of SiO^sub 2^/AlGaN/GaN MOSHFETs is described in this paper. The C-V measurements showed slight increase in sheet carrier density after applying 12 nm-thick PECVD SiO^sub 2^. The devices exhibited gate leakage current of 5 x 10^sup -10^ A/mm. The small-signal RF characterization of 0...

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Bibliographic Details
Published inElectronics letters Vol. 41; no. 11; p. 1
Main Authors Bernát, J, Gregusová, D, Heidelberger, G, Fox, A, Marso, M, Lüth, H, Kordos, P
Format Journal Article
LanguageEnglish
Published Stevenage John Wiley & Sons, Inc 26.05.2005
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Summary:The performance of SiO^sub 2^/AlGaN/GaN MOSHFETs is described in this paper. The C-V measurements showed slight increase in sheet carrier density after applying 12 nm-thick PECVD SiO^sub 2^. The devices exhibited gate leakage current of 5 x 10^sup -10^ A/mm. The small-signal RF characterization of 0.7 μm gate length devices yielded an f^sub T^ of 24 GHz and an f^sub max^ of 40 GHz, which are comparable to those typical state-of-the-art AlGaN/GaN HFETs.
ISSN:0013-5194
1350-911X