Progress Towards Production Worthy EUV Photoresists

Implementation of EUV Lithography (EUVL) for device high volume manufacturing (HVM) requires advanced photoresists capable of meeting the criteria of advanced logic and memory design rules. To achieve the level of performance required, resists must show excellent performance in terms of resolution,...

Full description

Saved in:
Bibliographic Details
Published inJournal of photopolymer science and technology Vol. 27; no. 5; p. 667
Main Authors Cameron, James, Thackeray, James, Jain, Vipul, LaBeaume, Paul, Coley, Suzanne, Ongayi, Owendi, Wagner, Mike, Biafore, John
Format Journal Article
LanguageEnglish
Published Hiratsuka Japan Science and Technology Agency 01.09.2014
Online AccessGet full text

Cover

More Information
Summary:Implementation of EUV Lithography (EUVL) for device high volume manufacturing (HVM) requires advanced photoresists capable of meeting the criteria of advanced logic and memory design rules. To achieve the level of performance required, resists must show excellent performance in terms of resolution, LWR (or CDU) and sensitivity. In addition, resists must meet the outgassing criteria required for HVM on the NXE toolset. Lastly, it is anticipated that resists with low OOB sensitivity will also be required. In this paper, we describe our progress in all of these areas. Based on our results, we believe we are on track to deliver production worthy resists for the EUVL era.
ISSN:0914-9244
1349-6336