Growth and Characterization of In^sub x^Ga^sub 1â 'x^As/GaAs^sub 1â 'y^P^sub y^ Strained-Layer Superlattices with High Values of y (~80%)

• Published in: Journal of electronic materials Vol. 42; no. 5; p. 912
• Main Authors: Samberg, J P, Carlin, C Z, Bradshaw, G K, Colter, P C, Bedair, S M
• Format: Journal Article
• Language: English
• Published: Warrendale Springer Nature B.V 01.05.2013
• Subjects: Materials science; Phosphorus; Photovoltaic cells; Semiconductors
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-012-2375-0

Issue Title: 2012 Electronic Materials Conference. Guest Editors: Joshua Caldwell, Rachel Goldman, Jamie Phillips, Oana Jurchescu, Shadi Shahedipour-Sandvik, Alberto Salleo, Grace Xing, and Jian Xu Strained-layer superlattice (SLS) structures, such as InGaAs/GaAsP lattice matched to GaAs, have shown great potential in absorption devices such as photodetectors and triple-junction photovoltaic cells. However, until recently they have been somewhat hindered by their usage of low-phosphorus GaAsP barriers. High-P-composition GaAsP was developed as the barrier for InGaAs/GaAsP strained-layer superlattice (SLS) structures, and the merits of using such a high composition of phosphorus are discussed. It is believed that these barriers represent the highest phosphorus content to date in such a structure. By using high-composition GaAsP the carriers are collected via tunneling (for barriers â[per thousand]¤30Â Ã...) as opposed to thermionic emission. Thus, by utilizing thin, high-content GaAsP barriers one can increase the percentage of the intrinsic in a p-i-n structure that is composed of InGaAs wells in addition to increasing the number of periods that can be grown for given depletion width. However, standard SLSs of this type inherently possess undesirable compressive strain and quantum size effects (QSEs) that cause the optical absorption of the thin InGaAs SLS wells to shift to higher energies relative to that of bulk InGaAs of the same composition. To circumvent these deleterious QSEs, stress-balanced, pseudomorphic InGaAs/GaAsP staggered SLSs were grown. Staggering was achieved by removing a portion of one well and adding it to an adjacent well. The spectral response obtained from device characterization indicated that staggering resulted in thicker InGaAs films with reduced cutoff energy. Additionally, these data confirm that tunneling is a very effective means for carrier transport in the SLS.[PUBLICATION ABSTRACT]