340-W Peak Power From a GaSb 2-[Formula Omitted]m Optically Pumped Semiconductor Laser (OPSL) Grown Mismatched on GaAs

A GaSb-based vertical external cavity laser at 2 [Formula Omitted]m was pumped by 100- to 160-ns pulses from a Nd : YAG laser at 1.064 [Formula Omitted]m operating at 1 kHz. It was shown that the output power scales with the pump spot diameter to the extent of our experiments. A peak output of over...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 22; no. 16; p. 1253
Main Authors Lai, Yi-Ying, Yarborough, J. M, Kaneda, Yushi, Hader, Jörg, Moloney, Jerome V, Rotter, T. J, Balakrishnan, G, Hains, C, Koch, S. W
Format Journal Article
LanguageEnglish
Published New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 15.08.2010
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Summary:A GaSb-based vertical external cavity laser at 2 [Formula Omitted]m was pumped by 100- to 160-ns pulses from a Nd : YAG laser at 1.064 [Formula Omitted]m operating at 1 kHz. It was shown that the output power scales with the pump spot diameter to the extent of our experiments. A peak output of over 340 W was obtained.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2010.2052596