InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and [Formula Omitted] Ratio Near [Formula Omitted]

• Published in: IEEE electron device letters Vol. 33; no. 6; p. 782
• Main Authors: Zhou, Guangle, Lu, Yeqing, Li, Rui, Zhang, Qin, Liu, Qingmin, Vasen, Tim, Zhu, Haijun, Kuo, Jenn-Ming, Kosel, Tom, Wistey, Mark, Fay, Patrick, Seabaugh, Alan, Xing, Huili
• Format: Journal Article
• Language: English
• Published: New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.06.2012
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2012.2189546

Vertical n-channel tunnel field-effect transistors (TFETs) with tunneling normal to the gate based on an [Formula Omitted] InP heterojunction have been demonstrated to exhibit simultaneously a high [Formula Omitted] ratio of [Formula Omitted], a minimum subthreshold swing [Formula Omitted] of 93 mV/dec, and an on-current of 20 [Formula Omitted] at [Formula Omitted] and a gate swing of 1.75 V at 300 K, a record TFET performance. The significant improvement in device performance is ascribed to the adoption of a thin equivalent oxide thickness (EOT) of [Formula Omitted]1.3 nm for improved electrostatics and the use of plasma-enhanced chemical vapor deposition [Formula Omitted] mesa passivation to preserve the integrity of the thin exposed semiconductor layers.