A 0.18-[micro]m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)
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| Published in | IEEE journal of solid-state circuits Vol. 40; no. 1; p. 293 |
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| Main Authors | , , , , , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
New York
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
01.01.2005
|
| Online Access | Get full text |
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| Author | Jeong, Gitae Oh, Hyung-Rok Jeong, Hongsik Cho, Woo Yeong Byun, Hyun-Geun Kwak, Choong-Keun Kim, Kinam Kim, Ki-Sung Ahn, S Cho, Beak-Hyung Kim, Du-Eung Choi, Byung-Gil Kang, Sangbeom Kim, Kyung-Hee Hwang, Youngnam Koh, Gwan-Hyeob |
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| Title | A 0.18-[micro]m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM) |
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