A 0.18-[micro]m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

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Bibliographic Details
Published inIEEE journal of solid-state circuits Vol. 40; no. 1; p. 293
Main Authors Cho, Woo Yeong, Cho, Beak-Hyung, Choi, Byung-Gil, Oh, Hyung-Rok, Kang, Sangbeom, Kim, Ki-Sung, Kim, Kyung-Hee, Kim, Du-Eung, Kwak, Choong-Keun, Byun, Hyun-Geun, Hwang, Youngnam, Ahn, S, Koh, Gwan-Hyeob, Jeong, Gitae, Jeong, Hongsik, Kim, Kinam
Format Journal Article
LanguageEnglish
Published New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.01.2005
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ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2004.837974(410)40