High yielding self-aligned contact process for a 0.150-[micro]m DRAM technology

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Bibliographic Details
Published inIEEE transactions on semiconductor manufacturing Vol. 15; no. 2; p. 223
Main Authors Rupp, T.S, Dobuzinsky, D, Sardesai, V.Y, Liu, Hang-Yip, Maldei, M, Faltermeier, J, Gambino, J
Format Journal Article
LanguageEnglish
Published New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.05.2002
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ISSN:0894-6507
1558-2345
DOI:10.1109/66.999596