Passivation and reactivation of shallow level defects in p-CdTe after low-energy hydrogen implantation

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Bibliographic Details
Published inJournal of crystal growth Vol. 214-15; pp. 979 - 982
Main Authors REISLÖHNER, U, ACHTZIGER, N, HÜLSEN, C, WITTHUHN, W
Format Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier 2000
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals; microstructure
Doping and impurity implantation in iii-v and ii-vi semiconductors
Electron states
Exact sciences and technology
Ii-vi semiconductors
Impurity and defect levels
Magnetic resonances and relaxations in condensed matter, mössbauer effect
Mossbauer effect; other γ-ray spectroscopy
Mössbauer effect; other γ-ray spectroscopy
Physics
Structure of solids and liquids; crystallography
Defect states
Perturbed angular correlation
Ion implantation
Inorganic compounds
Shallow level
Cadmium tellurides
Transition element compounds
Experimental study
p-type conductors
Acceptors
Passivation
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ISSN:0022-0248
1873-5002