Mass spectrometry detection of SiHm and CHm radicals from SiH4-CH4-H2 RF discharges under high temperature deposition conditions of silicon carbide

• Published in: Japanese journal of applied physics Vol. 33; no. 7B; pp. 4303 - 4307
• Main Authors: KAE-NUNE, P, PERRIN, J, GUILLON, J, JOLLY, J
• Format: Conference Proceeding
• Language: English
• Published: Tokyo Japanese journal of applied physics 1994
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Physics of gases, plasmas and electric discharges; Physics of plasmas and electric discharges; Plasma diagnostic techniques and instrumentation; Plasma production and heating; Plasma sources; Methane; Methylene radicals; Silanes; Materials processing reactors; Silicon carbides; Mass spectroscopy; Experimental study; RF systems; Chemical vapor deposition; Plasma sources; Proceedings; Methyl radicals; Plasma diagnostics
• ISSN: 0021-4922; 1347-4065