GaAs1-xPx/GaAs quantum-well structures with tensile-strained barriers Strained-layer optoelectronic materials and devices

• Published in: IEEE journal of quantum electronics Vol. 30; no. 2; pp. 459 - 465
• Main Authors: AGAHI, F, LAU, K. M, KOTELES, E. S, BALIGA, A, ANDERSON, N. G
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 1994
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronics; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Lasers; Optical elements, devices, and systems; Optical processors, correlators, and modulators; Optics; Optoelectronic devices; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor lasers; laser diodes; Confinement; Gallium arsenides; Inorganic compounds; Semiconductor materials; Ternary compounds; Quantum wells; Binary compounds; Experimental study; Laser diodes; Gallium phosphides; Tensile stress; Semiconductor lasers; Optical modulators
• ISSN: 0018-9197; 1558-1713