Process dependency of radiation harndess of rapid thermal reoxidized nitrided gate oxides

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 40; no. 9; pp. 1597 - 1603
Main Authors WEI-SHIN LU, KUAN-CHIN LIN, JENN-GWO HWU
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 1993
Subjects
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
MOS technology
Field effect transistor
Rapid thermal annealing
Electrical properties
MOS structure
Oxidation
MOS transistor
Experimental study
MOS capacity
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ISSN:0018-9383
1557-9646