Band structure, magneto-transport, and magneto-optical properties of InAs-Ga1-xInxSb superlattices

• Published in: Journal of electronic materials Vol. 24; no. 5; pp. 551 - 557
• Main Authors: MEYER, J. R, HOFFMAN, C. A, OMAGGIO, J. P, YOUNGDALE, E. R, BARTOLI, F. J, MILES, R. H, CHOW, D. H, RAM-MOHAN, L. R
• Format: Conference Proceeding
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 1995
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electrical properties of specific thin films; Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Iii-v semiconductors; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Band structure; Inorganic compounds; Gallium antimonides; Semiconductor materials; Indium antimonides; Ternary compounds; Infrared detector; Theoretical study; Binary compounds; Hall effect; Experimental study; Indium arsenides; Superlattices; Magneto-optical effects; Carrier mobility
• ISSN: 0361-5235; 1543-186X