Optimization of the Driver of GaN Power Transistors Through Measurement of Their Thermal Behavior SPECIAL ISSUE ON WIDE BANDGAP DEVICES AND THEIR APPLICATIONS

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Bibliographic Details
Published inIEEE transactions on power electronics Vol. 29; no. 5; pp. 2359 - 2366
Main Authors HOFFMANN, Lionel, GAUTIER, Cyrille, LEFEBVRE, Stéphane, COSTA, François
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 2014
Subjects
Applied sciences
Electrical engineering. Electrical power engineering
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Other multijunction devices. Power transistors. Thyristors
Power electronics, power supplies
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Inverter
Power converter
Thermal behavior
driver circuits
Driver
Power electronics
Switching
Optimization
Power transistor
Field effect transistor
Power measurement
Deadtime
Single transistor circuit
Power device
Calorimetry
Capacitance
Power semiconductor devices
High frequency
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ISSN:0885-8993
1941-0107