MBE growth of GaInAsSb p/n junction diodes for thermophotovoltaic applications
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| Published in | Journal of crystal growth Vol. 175-76; pp. 877 - 882 |
|---|---|
| Main Authors | , , , , , , |
| Format | Conference Proceeding |
| Language | English |
| Published |
Amsterdam
Elsevier
1997
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| Subjects | |
| Online Access | Get full text |
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| Author | SVENSSON, S GILL, D CAMPBELL, B UPPAL, P. N LOUGHIN, S BALDASARO, P CHARACHE, G |
|---|---|
| Author_xml | – sequence: 1 givenname: P. N surname: UPPAL fullname: UPPAL, P. N organization: Sanders, A Lockheed Martin Company, NHQ6-1551, 65 Spit Brook Road, Nashua, New Hampshire 03061, United States – sequence: 2 givenname: G surname: CHARACHE fullname: CHARACHE, G organization: Lockheed Martin, P.O. Box 1072, Schenectady, New York 12301, United States – sequence: 3 givenname: P surname: BALDASARO fullname: BALDASARO, P organization: Lockheed Martin, P.O. Box 1072, Schenectady, New York 12301, United States – sequence: 4 givenname: B surname: CAMPBELL fullname: CAMPBELL, B organization: Lockheed Martin, P.O. Box 1072, Schenectady, New York 12301, United States – sequence: 5 givenname: S surname: LOUGHIN fullname: LOUGHIN, S organization: Lockheed Martin Astro Space, P.O. Box 8555, Philadelphia, Pennsylvania 19101, United States – sequence: 6 givenname: S surname: SVENSSON fullname: SVENSSON, S organization: ARL, AMSRL-PS-PB, 2800 Powder Mill Rd., Adelphi, Maryland 20783, United States – sequence: 7 givenname: D surname: GILL fullname: GILL, D organization: National Semiconductor, 10810 Guilford Rd., Suite 111, Annapolis Junction, Maryland 20701, United States |
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| Keywords | Gallium Arsenides Quaternary compound Molecular beam condensation p n junction Semiconductor diode Thermophotovoltaic device Manufacturing Experimental study Indium Antimonides III-V compound |
| Language | English |
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| PublicationTitle | Journal of crystal growth |
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| SubjectTerms | Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| Title | MBE growth of GaInAsSb p/n junction diodes for thermophotovoltaic applications |
| Volume | 175-76 |
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