MBE growth of GaInAsSb p/n junction diodes for thermophotovoltaic applications

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Bibliographic Details
Published inJournal of crystal growth Vol. 175-76; pp. 877 - 882
Main Authors UPPAL, P. N, CHARACHE, G, BALDASARO, P, CAMPBELL, B, LOUGHIN, S, SVENSSON, S, GILL, D
Format Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier 1997
Subjects
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Gallium Arsenides
Quaternary compound
Molecular beam condensation
p n junction
Semiconductor diode
Thermophotovoltaic device
Manufacturing
Experimental study
Indium Antimonides
III-V compound
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ISSN:0022-0248
1873-5002