Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs Selected extended papers from ULIS 2012 conference

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Bibliographic Details
Published inSolid-state electronics Vol. 88; pp. 49 - 53
Main Authors CONZATTI, F, PALA, M. G, ESSENI, D, BANO, E
Format Journal Article
LanguageEnglish
Published Kidlington Elsevier 2013
Subjects
Applied sciences
Cross-disciplinary physics: materials science; rheology
Electronics
Exact sciences and technology
Materials science
Nanoscale materials and structures: fabrication and characterization
Physics
Quantum wires
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Performance evaluation
Band structure
Tunnel effect
Strain
Field effect transistor
NEGF
Tunnel FET
Nanowire device
InAs
n type semiconductor
Nanowire
Nanowires
Hamiltonian
Simulator
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ISSN:0038-1101
1879-2405