Prediction of energy change due to hot carrier injection in nano-structured CMOS system: Perspective of an envelope detector : Nanodevices

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Bibliographic Details
Published inMicroelectronic engineering Vol. 111; pp. 256 - 260
Main Authors NISSAR MOHAMMAD KARIM, SOIN, Norhayati, MANZOOR, Sadia, SOON, F. Y, MOUNIR, M
Format Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier 2013
Subjects
Applied sciences
Circuit properties
Circuits of signal characteristics conditioning (including delay circuits)
Cross-disciplinary physics: materials science; rheology
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Integrated circuits
Materials science
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solid solution, precipitation, and dispersion hardening; aging
Transistors
Treatment of materials and its effects on microstructure and properties
Performance evaluation
Voltage threshold
MOSFET
Envelope detector
Voltage current curve
n-MOSFET aging
Nanostructured material
Implementation
Correlation method
Radio frequency
Complementary MOS technology
Drain current
Hot carrier
Man machine relation
CMOS integrated circuits
MOS technology
CMOS reliability
Gain change
Ageing
Nanostructure
Radiofrequency
Forecasting
Scaling law
Limiting factor
Reliability
Gain
Charge carrier injection
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ISSN:0167-9317
1873-5568