Site-Selective Epitaxy of Graphene on Si Wafers EMERGING GRAPHENE-BASED ELECTRONIC & PHOTONIC DEVICES, CIRCUITS, AND SYSTEMS

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Bibliographic Details
Published inProceedings of the IEEE Vol. 101; no. 7; pp. 1557 - 1566
Main Authors FUKIDOME, Hirokazu, KAWAI, Yusuke, OTSUJI, Taiichi, SUEMITSU, Maki, HANDA, Hiroyuki, HIBINO, Hiroki, MIYASHITA, Hidetoshi, KOTSUGI, Masato, OHKOCHI, Takuo, JUNG, Myung-Ho, SUEMITSU, Tetsuya, KINOSHITA, Toyohiko
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 2013
Subjects
Applied sciences
Cross-disciplinary physics: materials science; rheology
Electronics
Exact sciences and technology
Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Microelectronic fabrication (materials and surfaces technology)
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thin films
Crystal growth
LPE
Electronic properties
Silicon carbide
Selective growth
substrate microfabrication
Epitaxy
Si
Graphene with silicon
Substrates
graphene
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ISSN:0018-9219
1558-2256