Vertical InGaN light-emitting diodes with Ag paste as bonding layer Reliability of High-Power LED Packaging and Assembly

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Bibliographic Details
Published inMicroelectronics and reliability Vol. 52; no. 5; pp. 949 - 951
Main Authors YANG, Y. C, SHEU, Jinn-Kong, LEE, Ming-Lun, HSU, Che-Kang, TU, Shang-Ju, LIU, Shu-Yen, YANG, C. C, HUANG, Feng-Wen
Format Journal Article
LanguageEnglish
Published Kidlington Elsevier 2012
Subjects
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Ternary compound
Thermal stress
Gallium nitride
III-V compound
Light emitting diode
Integrated circuit bonding
Soldered joint
Optoelectronic device
Optical characteristic
Indium nitride
Reliability
Low temperature
Electrical characteristic
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ISSN:0026-2714